TC55257BSPL Datasheet PDF - Toshiba Semiconductor SILICON GATE CMOS STATIC RAM Specs

TC55257BSPL - SILICON GATE CMOS STATIC RAM

This page provides the datasheet information for the TC55257BSPL, a member of the TC55257BFL SILICON GATE CMOS STATIC RAM family.

Datasheet Summary

Description

The TC55257BPL is a 262,144 bit CMOS static random access memory organized as 32,768 words by 8 bits and operated from a single 5V power supply.

Features

with an operating current of 5mNMHz fup. ) and a minimum cycle time of 85ns. When CE is a logical high, the device is placed in a low power standby mode in which the standby current is 10Q. lA. The TC55257BPL has two control inputs. Chip enable (CE) allows for device selection and data retention control, while an output enable input (OE) provides fast memory access. The TC55257BPL is suitable for use in microprocessor systems where high speed, low power, and battery backup are required. The TC5525.

Datasheet Details

Part number	TC55257BSPL
Manufacturer	Toshiba Semiconductor
File Size	224.98 KB
Description	SILICON GATE CMOS STATIC RAM
Datasheet	TC55257BSPL Datasheet
Additional preview pages of the TC55257BSPL datasheet.

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Full PDF Text Transcription

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TOSHIBA TC55257BPL/BFL/BSPL/BFIL/BIRL-85/10 SILICON GATE CMOS 32,768 WORD x 8 BIT STATIC RAM Description The TC55257BPL is a 262,144 bit CMOS static random access memory organized as 32,768 words by 8 bits and operated from a single 5V power supply. Advanced circuit techniques provide both high speed and low power features with an operating current of 5mNMHz fup.) and a minimum cycle time of 85ns. When CE is a logical high, the device is placed in a low power standby mode in which the standby current is 10Q.lA. The TC55257BPL has two control inputs. Chip enable (CE) allows for device selection and data retention control, while an output enable input (OE) provides fast memory access.

Published: Oct 15, 2005 |