TC55257BSPL-10LV, TC55257BFLLV - SILICON GATE CMOS STATIC RAM

Toshiba

Datasheet Details

Part number	TC55257BSPL-10LV, TC55257BFLLV
Manufacturer	Toshiba
File Size	272.29 KB
Description	SILICON GATE CMOS STATIC RAM
Datasheet	TC55257BFLLV_ToshibaSemiconductor.pdf
Note	This datasheet PDF includes multiple part numbers: TC55257BSPL-10LV, TC55257BFLLV. Please refer to the document for exact specifications by model.

The TC55257BPL is a 262,144 bit CMOS static random access memory organized as 32,768 words by 8 bits and operated from a single 5V power supply.

with an operating current of 5mNMHz fup. ) and a minimum cycle time of 85ns. When CE is a logical high, the device is placed in a low power standby mode in which the standby current is 2J,lA at room tem- perature. The TC55257BPL has two control inputs. Chip enable (CE) allows for device selection and data retention control, while an output enable input (OE) provides fast memory access. The TC55257BPL is suitable for use in microprocessor systems where high speed, low power, and battery backup are.

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Published: Feb 19, 2017 |