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TC55257BSPL-10LV

SILICON GATE CMOS STATIC RAM

TC55257BSPL-10LV Features

* with an operating current of 5mNMHz fup.) and a minimum cycle time of 85ns. When CE is a logical high, the device is placed in a low power standby mode in which the standby current is 2J,lA at room tem- perature. The TC55257BPL has two control inputs. Chip enable (CE) allows for device selection and

TC55257BSPL-10LV Datasheet (272.29 KB)

Preview of TC55257BSPL-10LV PDF

Datasheet Details

Part number:

TC55257BSPL-10LV

Manufacturer:

Toshiba ↗

File Size:

272.29 KB

Description:

Silicon gate cmos static ram.

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