tentative toshiba mos digital integrated circuit silicon gate cmos.
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* Low-power dissipation Operating: 15 mW/MHz (typical) Single power supply voltage of 5 V ± 10% Power down features using CE . Dat.
where high speed, low power and battery backup are required. And, with a guaranteed operating range of −40° to 85°C, the.
The TC55NEM208AFPN/AFTN is a 4,194,304-bit static random access memory (SRAM) organized as 524,288 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 5V ± 10% power supply. Advanced ci.
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