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TC55NEM216AFTN70 - (TC55NEM216AFTN55 / TC55NEM216AFTN77) MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

Download the TC55NEM216AFTN70 datasheet PDF. This datasheet also covers the TC55NEM216AFTN55 variant, as both devices belong to the same (tc55nem216aftn55 / tc55nem216aftn77) mos digital integrated circuit silicon gate cmos family and are provided as variant models within a single manufacturer datasheet.

General Description

The TC55NEM216AFTN is a 4,194,304-bit static random access memory (SRAM) organized as 262,144 words by 16 bits.

Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 5V ± 10% power supply.

Key Features

  • Low-power dissipation Operating: 15 mW/MHz (typical) Single power supply voltage of 5 V ± 10% Power down features using CE Data retention supply voltage of 2.0 to 5.5 V Direct TTL compatibility for all inputs and outputs Wide operating temperature range of.
  • 40° to 85°C Standby Current (maximum): 20 µA.
  • Access Times (maximum): TC55NEM216AFTN 55 Access Time CE Access Time OE Access Time 70 70 ns 70 ns 35 ns 55.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (TC55NEM216AFTN55_ToshibaSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number TC55NEM216AFTN70
Manufacturer Toshiba
File Size 219.68 KB
Description (TC55NEM216AFTN55 / TC55NEM216AFTN77) MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
Datasheet download datasheet TC55NEM216AFTN70 Datasheet

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Other Datasheets by Toshiba

Part Number Description
TC55NEM216AFTN55 (TC55NEM216AFTN55 / TC55NEM216AFTN77) MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
TC55NEM216ASTV55 (TC55NEM216ASTV55 / TC55NEM216ASTV77) MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
TC55NEM216ASTV77 (TC55NEM216ASTV55 / TC55NEM216ASTV77) MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
TC55NEM208AFPN TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
TC55NEM208AFPV STATIC RAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
TC55NEM216AFTN55,70 www.DataSheet4U.com TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD BY 16-BIT FULL CMOS STATIC RAM DESCRIPTION The TC55NEM216AFTN is a 4,194,304-bit static random access memory (SRAM) organized as 262,144 words by 16 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 5V ± 10% power supply. Advanced circuit technology provides both high speed and low power at an operating current of 3 mA/MHz (typ) and a minimum cycle time of 55 ns. It is automatically placed in low-power mode at 1 µA standby current (typ) when chip enable ( CE ) is asserted high. There are two control inputs.