Datasheet4U Logo Datasheet4U.com

TC55NEM216ASTV77 - (TC55NEM216ASTV55 / TC55NEM216ASTV77) MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

Download the TC55NEM216ASTV77 datasheet PDF. This datasheet also covers the TC55NEM216ASTV55 variant, as both devices belong to the same (tc55nem216astv55 / tc55nem216astv77) mos digital integrated circuit silicon gate cmos family and are provided as variant models within a single manufacturer datasheet.

General Description

The TC55NEM216ASTV is a 4,194,304-bit static random access memory (SRAM) organized as 262,144 words by 16 bits.

Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 2.7 to 5.5 V power supply.

Key Features

  • Low-power dissipation Operating: 15 mW/MHz (typical) Single power supply voltage of 2.7 to 5.5 V Power down features using CE Data retention supply voltage of 2.0 to 5.5 V Direct TTL compatibility for all inputs and outputs Wide operating temperature range of.
  • 40° to 85°C Standby Current (maximum): 20 µA.
  • Access Times (maximum): TC55NEM216ASTV 55 Access Time CE Access Time OE Access Time 55 ns 55 ns 30 ns 7.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (TC55NEM216ASTV55_ToshibaSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number TC55NEM216ASTV77
Manufacturer Toshiba
File Size 159.27 KB
Description (TC55NEM216ASTV55 / TC55NEM216ASTV77) MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
Datasheet download datasheet TC55NEM216ASTV77 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
TC5501 256 Word x 4-Bit CMOS RAM Toshiba
TC5501D 256 Word x 4-Bit CMOS RAM Toshiba
TC5501D-1 256 Word x 4-Bit CMOS RAM Toshiba
TC5501P 256 Word x 4-Bit CMOS RAM Toshiba
TC5501P-1 256 Word x 4-Bit CMOS RAM Toshiba

Other Datasheets by Toshiba

Part Number Description
TC55NEM216ASTV55 (TC55NEM216ASTV55 / TC55NEM216ASTV77) MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
TC55NEM216AFTN55 (TC55NEM216AFTN55 / TC55NEM216AFTN77) MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
TC55NEM216AFTN70 (TC55NEM216AFTN55 / TC55NEM216AFTN77) MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
TC55NEM208AFPN TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
TC55NEM208AFPV STATIC RAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
TC55NEM216ASTV55,70 www.DataSheet4U.com TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD BY 16-BIT FULL CMOS STATIC RAM DESCRIPTION The TC55NEM216ASTV is a 4,194,304-bit static random access memory (SRAM) organized as 262,144 words by 16 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 2.7 to 5.5 V power supply. Advanced circuit technology provides both high speed and low power at an operating current of 3 mA/MHz (typ) and a minimum cycle time of 55 ns. It is automatically placed in low-power mode at 1 µA standby current (typ) when chip enable ( CE ) is asserted high or chip select (CS) is asserted low. There are three control inputs.