TC55NEM208AFPN Datasheet Tentative Toshiba Mos Digital Integrated Circuit Silicon Gate CMOS

Manufacturer: Toshiba

Overview: .. TC55NEM208AFPN/AFTN55,70 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524,288-WORD BY 8-BIT STATIC.

Datasheet Details

Part number	TC55NEM208AFPN
Manufacturer	Toshiba
File Size	134.83 KB
Description	TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
Datasheet	TC55NEM208AFPN_ToshibaSemiconductor.pdf

The TC55NEM208AFPN/AFTN is a 4,194,304-bit static random access memory (SRAM) organized as 524,288 words by 8 bits.

Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 5V ± 10% power supply.

Advanced circuit technology provides both high speed and low power at an operating current of 3 mA/MHz (typ) and a minimum cycle time of 55 ns.

Low-power dissipation Operating: 15 mW/MHz (typical) Single power supply voltage of 5 V ± 10% Power down features using CE . Data retention supply voltage of 2.0 to 5.5 V Direct TTL compatibility for all inputs and outputs Wide operating temperature range of.
40° to 85°C Standby Current (maximum):20 µA.
Access Times (maximum): TC55NEM208AFPN/AFTN 55 Access Time 55 ns 55 ns 30 ns 70 70 ns 70 ns 35 ns CE Access.

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