TC55NEM208AFTV - STATIC RAM

Product Overview

Toshiba Semiconductor

Part number	TC55NEM208AFTV
Manufacturer	Toshiba Semiconductor
File Size	146.90 KB
Description	STATIC RAM
Datasheet	TC55NEM208AFTV Datasheet
Note	This datasheet PDF includes multiple part numbers: TC55NEM208AFTV, TC55NEM208AFPV. Please refer to the document for exact specifications by model.
Additional preview pages of the TC55NEM208AFTV datasheet.

The TC55NEM208AFPV/AFTV is a 4,194,304-bit static random access memory (SRAM) organized as 524,288 words by 8 bits.

Low-power dissipation Operating: 15 mW/MHz (typical) Single power supply voltage of 2.7 to 5.5 V Power down features using CE . Data retention supply voltage of 2.0 to 5.5 V Direct TTL compatibility for all inputs and outputs Wide operating temperature range of.
40° to 85°C Standby Current (maximum):20 µA.
Access Times (maximum): TC55NEM208AFPV/AFTV 55 Access Time 55 ns 55 ns 30 ns 70 70 ns 70 ns 35 ns CE Acc.

📁 Similar Datasheet

Other Datasheets by Toshiba Semiconductor

TC55NEM208AFTN - TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
TC55NEM208AFPN - TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
TC55NEM208AFPV - STATIC RAM
TC55NEM216AFTN55 - (TC55NEM216AFTN55 / TC55NEM216AFTN77) MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
TC55NEM216AFTN70 - (TC55NEM216AFTN55 / TC55NEM216AFTN77) MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
TC55NEM216ASTV55 - (TC55NEM216ASTV55 / TC55NEM216ASTV77) MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

Published: Feb 9, 2007 |