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TC55NEM208AFTV - STATIC RAM

Download the TC55NEM208AFTV datasheet PDF. This datasheet also covers the TC55NEM208AFPV variant, as both devices belong to the same static ram family and are provided as variant models within a single manufacturer datasheet.

General Description

The TC55NEM208AFPV/AFTV is a 4,194,304-bit static random access memory (SRAM) organized as 524,288 words by 8 bits.

Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 2.7 to 5.5 V power supply.

Key Features

  • Low-power dissipation Operating: 15 mW/MHz (typical) Single power supply voltage of 2.7 to 5.5 V Power down features using CE . Data retention supply voltage of 2.0 to 5.5 V Direct TTL compatibility for all inputs and outputs Wide operating temperature range of.
  • 40° to 85°C Standby Current (maximum):20 µA.
  • Access Times (maximum): TC55NEM208AFPV/AFTV 55 Access Time 55 ns 55 ns 30 ns 70 70 ns 70 ns 35 ns CE Acc.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (TC55NEM208AFPV_ToshibaSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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TC5501P 256 Word x 4-Bit CMOS RAM Toshiba
TC5501P-1 256 Word x 4-Bit CMOS RAM Toshiba

Other Datasheets by Toshiba

Part Number Description
TC55NEM208AFTN TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
TC55NEM208AFPN TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
TC55NEM208AFPV STATIC RAM
TC55NEM216AFTN55 (TC55NEM216AFTN55 / TC55NEM216AFTN77) MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
TC55NEM216AFTN70 (TC55NEM216AFTN55 / TC55NEM216AFTN77) MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com TC55NEM208AFPV/AFTV55,70 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524,288-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC55NEM208AFPV/AFTV is a 4,194,304-bit static random access memory (SRAM) organized as 524,288 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 2.7 to 5.5 V power supply. Advanced circuit technology provides both high speed and low power at an operating current of 3 mA/MHz (typ) and a minimum cycle time of 55 ns. It is automatically placed in low-power mode at 1 µA standby current (typ) when chip enable ( CE ) is asserted high. There are two control inputs.