TC58FVB160A
Overview
- Power supply voltage VDD = 2.7 V~3.6 V Operating temperature Ta = -40°C~85°C Organization 2M × 8 bits / 1M × 16 bits Functions Auto Program, Auto Erase Fast Program Mode Program Suspend/Resume Erase Suspend/Resume data polling / Toggle bit block protection Automatic Sleep, support for hidden ROM area common flash memory interface (CFI) Byte/Word Modes * * * * *
- Block erase architecture 1 × 16 Kbytes / 2 × 8 Kbytes 1 × 32 Kbytes / 31 × 64 Kbytes Boot block architecture TC58FVT160AFT/AXB: top boot block TC58FVB160AFT/AXB: bottom boot block Mode control Compatible with JEDEC standard commands Erase/Program cycles 105 cycles typ. Access time 70 ns (CL: 30 pF) 100 ns (CL: 100 pF) Power consumption 5 µA (Standby) 30 mA (Read operation) 15 mA (Program/Erase operations) Package TC58FVT160/B160AFT: TSOPI48-P-1220-0.50 (weight: 0.51 g) TC58FVT160/B160AXB: P-TFBGA48-0608-0.80AZ (weight: 0.090 g)
- 000630EBA1
- TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunctio
