Datasheet4U Logo Datasheet4U.com

TC58FVB160A - SILICON GATE CMOS

Download the TC58FVB160A datasheet PDF. This datasheet also covers the TC58FVT160A variant, as both devices belong to the same silicon gate cmos family and are provided as variant models within a single manufacturer datasheet.

General Description

The TC58FVT160/B160A is a 16,777,216-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 2,097,152 words × 8 bits or as 1,048,576 words × 16 bits.

Key Features

  • commands for Read, Program and Erase operations to allow easy interfacing with microprocessors. The commands are based on the JEDEC standard. The Program and Erase operations are automatically executed in the chip.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (TC58FVT160A_ToshibaSemiconductor.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
TC58FVT160/B160AFT/AXB-70,-10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 16-MBIT (2M × 8 BITS / 1M × 16 BITS) CMOS FLASH MEMORY DESCRIPTION The TC58FVT160/B160A is a 16,777,216-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 2,097,152 words × 8 bits or as 1,048,576 words × 16 bits. The TC58FVT160/B160A features commands for Read, Program and Erase operations to allow easy interfacing with microprocessors. The commands are based on the JEDEC standard. The Program and Erase operations are automatically executed in the chip. FEATURES • • • • Power supply voltage VDD = 2.7 V~3.