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TC58V64BFT
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
2
64-MBIT (8M ´ 8 BITS) CMOS NAND E PROM DESCRIPTION
The TC58V64B is a single 3.3 V 64-Mbit (69,206,016) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes ´ 16 pages ´ 1024 blocks. The device has a 528-byte static register which allows program and read data to be transferred between the register and the memory cell array in 528-byte increments. The Erase operation is implemented in a single block unit (8 Kbytes + 256 bytes: 528 bytes ´ 16 pages). The TC58V64B is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for command inputs.
TC58V64BFT Datasheet
