TC58V64BDC - 64M-Bit CMOS NAND EPROM

Toshiba Semiconductor

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Datasheet Details

Part number	TC58V64BDC
Manufacturer	Toshiba Semiconductor
File Size	345.04 KB
Description	64M-Bit CMOS NAND EPROM
Datasheet	TC58V64BDC_ToshibaSemiconductor.pdf

TC58V64BDC Product details

Description

) The TC58V64B is a single 3.3-V 64-Mbit (69,206,016) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes ´ 16 pages ´ 1024 blocks.The device has a 528-byte static register which allows program and read data to be transferred between the register and the memory cell array in 528-byte increments.The Erase operation is implemented in a single block unit (8 Kbytes + 256 bytes: 528 bytes ´ 16 pages).The TC58V64B is a serial-type memory device wh

Features

Organization Memory cell array 528 ´ 16K ´ 8 Register 528 ´ 8 Page size 528 bytes Block size (8K + 256) bytes Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read Mode control Serial input/output, Command control Complies with the SmartMediaTM Electrical Specification and Data Format Specification issued by the SSFDC Forum.
Power supply VCC = 3.3 V ± 0.3 V Program/Erase Cycles 1E5 cycle (with ECC) Access time Cell array-register 25 ms max Serial Read c.

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Published: Apr 6, 2006 |