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TC58V64BDC 64M-Bit CMOS NAND EPROM

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Description

TC58V64BDC TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 TM 64-MBIT (8M ´ 8 BITS) CMOS NAND E PROM (8M BYTE SmartMedia DESCRIP.
) The TC58V64B is a single 3.

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Features

* Organization Memory cell array 528 ´ 16K ´ 8 Register 528 ´ 8 Page size 528 bytes Block size (8K + 256) bytes Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read Mode control Serial input/output, Command control Complies with the SmartMediaTM Electrical Specification and Data F

Applications

* such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require high-density non-volatile memory data storage. The data stored in the TC58V64BDC needs to comply with the data format standardized by the SSFDC Forum in order to maintain compatibil

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Toshiba Semiconductor TC58V64BDC-like datasheet