TC58V64BDC Datasheet - Toshiba Semiconductor

64M-Bit CMOS NAND EPROM

TC58V64BDC Features

* Organization Memory cell array 528 ´ 16K ´ 8 Register 528 ´ 8 Page size 528 bytes Block size (8K + 256) bytes Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read Mode control Serial input/output, Command control Complies with the SmartMediaTM Electrical Specification and Data F

TC58V64BDC General Description

) The TC58V64B is a single 3.3-V 64-Mbit (69,206,016) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes ´ 16 pages ´ 1024 blocks. The device has a 528-byte static register which allows program and read data to be transferred between the register .

TC58V64BDC Datasheet (345.04 KB)

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Datasheet Details

Part number:

TC58V64BDC

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

345.04 KB

Description:

64m-bit cmos nand eprom.
TC58V64BDC TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 TM 64-MBIT (8M ´ 8 BITS) CMOS NAND E PROM (8M BYTE SmartMedia DESCRIP.

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TC58V64BDC 64M-Bit CMOS NAND EPROM Toshiba Semiconductor

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TC58V64BDC Features

TC58V64BDC General Description

Datasheet Details

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