TC58V64DC - 16M-Bit CMOS NAND EPROM

Toshiba Semiconductor

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Datasheet Details

Part number	TC58V64DC
Manufacturer	Toshiba Semiconductor
File Size	715.28 KB
Description	16M-Bit CMOS NAND EPROM
Datasheet	TC58V64DC_ToshibaSemiconductor.pdf

TC58V64DC Product details

Description

2 TM ) The TC58V64 is a single 3.3-V 64-Mbit (69,206,016) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes × 16 pages × 1024 blocks.The device has a 528-byte static register which allows program and read data to be transferred between the register and the memory cell array in 528-byte increments.The Erase operation is implemented in a single block unit (8 Kbytes + 512 bytes: 528 bytes × 16 pages).The TC58V64 is a serial-type memory devi

Features

Organization Memory cell array 528 × 16K × 8 Register 528 × 8 Page size 528 bytes Block size (8K + 512) bytes Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read Mode control Serial input/output, Command control Complies with the SmartMediaTM Electrical Specification and Data Format Specification issued by the SSFDC Forum.
Power supply VCC = 3.3 V ± 0.3 V Access time Cell array-register 7 µs max Serial Read cycle 50 ns min Operating current.

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Published: Apr 6, 2006 |