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MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR
TIM3742-16SL-341
TECHNICAL DATA FEATURES
LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 31.5dBm Single Carrier Level HIGH POWER P1dB=42.5dBm at 3.3GHz to 3.6GHz HIGH GAIN G1dB=10.0dB at 3.3GHz to 3.6GHz BROAD BAND INTERNALLY MATCHED FET HERMETICALLY SEALED PACKAGE
RF PERFORMANCE SPECIFICATIONS
CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current Gain Flatness Power Added Efficiency 3rd Order Intermodulation Distortion Drain Current Channel Temperature Rise SYMBOL P1dB G1dB IDS1 ∆G
( Ta= 25°C )
UNIT dBm dB A dB % dBc A °C MIN. 41.5 10.0 -42 TYP. MAX. 42.5 4.4 36 -45 4.4 5.0 ±0.8 5.0 80
CONDITIONS
VDS= 10V f= 3.3 to 3.
TIM3742-16SL-341 Datasheet
