Datasheet Summary
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MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR
TECHNICAL DATA Features
- LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 31.5dBm Single Carrier Level
- HIGH POWER P1dB=42.5dBm at 3.3GHz to 3.6GHz
- HIGH GAIN G1dB=10.0dB at 3.3GHz to 3.6GHz
- BROAD BAND INTERNALLY MATCHED FET
- HERMETICALLY SEALED PACKAGE
RF PERFORMANCE SPECIFICATIONS
CHARACTERISTICS Output Power at 1dB Gain pression Point Power Gain at 1dB Gain pression Point Drain Current Gain Flatness Power Added Efficiency 3rd Order Intermodulation Distortion Drain Current Channel Temperature Rise SYMBOL P1dB G1dB IDS1 ∆G
( Ta= 25°C )
UNIT dBm dB A dB % dBc A °C MIN. 41.5 10.0 ...