TIM3742-8UL Description
MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TECHNICAL DATA.
TIM3742-8UL Key Features
- HIGH POWER P1dB=39.5dBm at 3.7GHz to 4.2GHz
- HIGH GAIN G1dB=11.0dB at 3.7GHz to 4.2GHz
- BROAD BAND INTERNALLY MATCHED
- HERMETICALLY SEALED PACKAGE
- 4.2GHz