TIM3742-25UL Datasheet | Toshiba

MICROWAVE POWER Ga As FET MICROWAVE SEMICONDUCTOR TECHNICAL DATA Features n HIGH POWER P1d B=44.5d Bm at 3.7GHz to 4.2GHz n HIGH GAIN G1d B=10.5d B at 3.7GHz to 4.2GHz n BROAD BAND INTERNALLY MATCHED FET n HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1d B Gain pression Point Power Gain at 1d B Gain pression Point Drain Current Gain Flatness Power Added Efficiency 3rd Order Intermodulation Distortion .. SYMBOL P1d B G1d B IDS1 ∆G CONDITIONS UNIT d Bm d B A d B % MIN. 43.5 9.5    -44   TYP. MAX. 44.5 10.5 6.8  38 -47 6.8    7.6 ±0.6   7.6 80 VDS= 10V f = 3.7 to 4.2GHz ηadd IM3 IDS2 ∆Tch Two-Tone Test Po=33.5d Bm (Single Carrier Level) (VDS X IDS + Pin - P1d B) X Rth(c-c) d Bc A °C Drain Current Channel Temperature Rise Remended gate resistance(Rg) : Rg= 28 Ω(MAX.) ELECTRICAL CHARACTERISTICS ( Ta= 25°C ) CHARACTERISTICS Transconductance Pinch-off Voltage Saturated Drain Current Gate-Source Breakdown Voltage Thermal Resistance SYMBOL gm VGSoff IDSS VGSO Rth(c-c) CONDITIONS VDS= 3V IDS= 8.0A VDS= 3V IDS= 80m A VDS= 3V VGS= 0V IGS= -280µA Channel to Case UNIT m S V A V °C/W MIN.  -1.0  -5  TYP. 5000 -2.5 14.4  1.2 MAX.  -4.0   1.5 u The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use, No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. Rev. Jun....