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TIM3742-25UL - MICROWAVE POWER GaAs FET

Datasheet Summary

Features

  • n HIGH POWER P1dB=44.5dBm at 3.7GHz to 4.2GHz n HIGH GAIN G1dB=10.5dB at 3.7GHz to 4.2GHz n BROAD BAND.

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Datasheet Details

Part number TIM3742-25UL
Manufacturer Toshiba Semiconductor
File Size 74.38 KB
Description MICROWAVE POWER GaAs FET
Datasheet download datasheet TIM3742-25UL Datasheet
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MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM3742-25UL TECHNICAL DATA FEATURES n HIGH POWER P1dB=44.5dBm at 3.7GHz to 4.2GHz n HIGH GAIN G1dB=10.5dB at 3.7GHz to 4.2GHz n BROAD BAND INTERNALLY MATCHED FET n HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current Gain Flatness Power Added Efficiency 3rd Order Intermodulation Distortion www.DataSheet4U.com SYMBOL P1dB G1dB IDS1 ∆G CONDITIONS UNIT dBm dB A dB % MIN. 43.5 9.5    -44   TYP. MAX. 44.5 10.5 6.8  38 -47 6.8    7.6 ±0.6   7.6 80 VDS= 10V f = 3.7 to 4.2GHz ηadd IM3 IDS2 ∆Tch Two-Tone Test Po=33.
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