TIM3742-16SL-341 Datasheet | Toshiba

.. MICROWAVE POWER Ga As FET MICROWAVE SEMICONDUCTOR TECHNICAL DATA Features - LOW INTERMODULATION DISTORTION IM3=-45 d Bc at Pout= 31.5d Bm Single Carrier Level - HIGH POWER P1d B=42.5d Bm at 3.3GHz to 3.6GHz - HIGH GAIN G1d B=10.0d B at 3.3GHz to 3.6GHz - BROAD BAND INTERNALLY MATCHED FET - HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Output Power at 1d B Gain pression Point Power Gain at 1d B Gain pression Point Drain Current Gain Flatness Power Added Efficiency 3rd Order Intermodulation Distortion Drain Current Channel Temperature Rise SYMBOL P1d B G1d B IDS1 ∆G ( Ta= 25°C ) UNIT d Bm d B A d B % d Bc A °C MIN. 41.5 10.0    -42   TYP. MAX. 42.5   4.4  36 -45 4.4   5.0 ±0.8   5.0 80 CONDITIONS VDS= 10V f= 3.3 to 3.6GHz ηadd IM3 IDS2 ∆Tch Two-Tone Test Po=31.5d Bm (Single Carrier Level) (VDS X IDS + Pin - P1d B) X Rth(c-c) Remended Gate Resistance(Rg): 100 Ω (Max.) ELECTRICAL CHARACTERISTICS CHARACTERISTICS Transconductance Pinch-off Voltage Saturated Drain Current Gate-Source Breakdown Voltage Thermal Resistance SYMBOL ( Ta= 25°C ) UNIT m S V A V °C/W MIN.  -1.0  -5  TYP. 3200 -2.5 10.0  1.4 MAX.  -4.0   2.0 gm VGSoff IDSS VGSO Rth(c-c) CONDITIONS VDS= 3V IDS= 5.2A VDS= 3V IDS= 70m A VDS= 3V VGS= 0V IGS= -210µA Channel to Case ‹ The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use, No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. Rev. Jul.,...