TIM3742-16SL-341 Description
MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM3742-16SL-341 TECHNICAL DATA.
TIM3742-16SL-341 Key Features
- LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 31.5dBm Single Carrier Level
- HIGH POWER P1dB=42.5dBm at 3.3GHz to 3.6GHz
- HIGH GAIN G1dB=10.0dB at 3.3GHz to 3.6GHz
- BROAD BAND INTERNALLY MATCHED FET
- HERMETICALLY SEALED PACKAGE
- P1dB) X Rth(c-c)