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TIM3742-8UL - MICROWAVE POWER GaAs FET

Features

  • TIM3742-8UL.
  • HIGH POWER P1dB=39.5dBm at 3.7GHz to 4.2GHz.
  • HIGH GAIN G1dB=11.0dB at 3.7GHz to 4.2GHz.
  • BROAD BAND.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES TIM3742-8UL „ HIGH POWER P1dB=39.5dBm at 3.7GHz to 4.2GHz „ HIGH GAIN G1dB=11.0dB at 3.7GHz to 4.2GHz „ BROAD BAND INTERNALLY MATCHED „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Compression Point Power Gain at 1dB Compression Point Drain Current Gain Flatness Power Added Efficiency 3rd Order Intermodulation Distortion Drain Current Channel Temperature Rise IDS2 ∆Tch IDS1 ∆G G1dB VDS= 10V dB A dB % Two Tone Test Po= 28.5dBm (Single Carrier Level) SYMBOL P1dB CONDITION UNIT MIN. TYP. MAX. dBm 38.5 10.0    -44   39.5 11.0 2.2  37 -47 2.2    2.6 ±0.6   2.6 80 f = 3.7 – 4.
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