Datasheet Summary
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MICROWAVE POWER GaAs FET
MICROWAVE SEMICONDUCTOR TECHNICAL DATA
Features
- HIGH POWER P1dB=39.5dBm at 3.7GHz to 4.2GHz
- HIGH GAIN G1dB=11.0dB at 3.7GHz to 4.2GHz
- BROAD BAND INTERNALLY MATCHED
- HERMETICALLY SEALED PACKAGE
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS Output Power at 1dB pression Point Power Gain at 1dB pression Point Drain Current Gain Flatness Power Added Efficiency 3rd Order Intermodulation Distortion Drain Current Channel Temperature Rise IDS2 ∆Tch IDS1 ∆G G1dB VDS= 10V dB A dB % Two Tone Test Po= 28.5dBm
(Single Carrier Level)
SYMBOL P1dB
CONDITION
UNIT MIN. TYP. MAX. dBm 38.5 10.0 -44 39.5 11.0...