Datasheet Summary
Features
･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER
P1dB= 36.5dBm at 7.7GHz to 8.5GHz ･HIGH GAIN
G1dB= 8.5dB at 7.7GHz to 8.5GHz ･HERMETICALLY SEALED PACKAGE
MICROWAVE POWER GaAs FET
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS Output Power at 1dB Gain pression Point Power Gain at 1dB Gain pression Point
Drain Current
Gain Flatness
SYMBOL
CONDITIONS
P1dB
G1dB IDS1 ∆G
VDS= 10V IDSset= 0.9A f = 7.7 to 8.5GHz
UNIT dBm dB
A dB
Power Added Efficiency
ηadd
%
3rd Order Intermodulation Distortion
Drain Current
IM3 IDS2
Two Tone Test dBc
Po= 25.5dBm, ∆f= 5MHz
(Single Carrier Level)
Channel Temperature Rise
∆Tch
(VDS X IDS + Pin
- P1dB)
X...