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TIM1011-2L - MICROWAVE POWER GaAs FET

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Part number TIM1011-2L
Manufacturer Toshiba Semiconductor
File Size 172.71 KB
Description MICROWAVE POWER GaAs FET
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www.DataSheet4U.com TOSHIBA MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES MICROWAVE POWER GaAs FET TIM1011-2L HIGH POWER P1dB=33.5dBm at 10.7GHz to 11.7GHz „ HIGH GAIN G1dB=7.5dB at 10.7GHz to 11.7GHz „ „ BROAD BAND INTERNALLY MATCHED HERMETICALLY SEALED PACKAGE „ RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Compression Point Power Gain at 1dB Compression Point Drain Current Power Added Efficiency 3rd Order Intermodulation Distortion Drain Current Channel Temperature Rise IDS2 ∆Tch IDS1 G1dB VDS= 9V 6.5   Two Tone Test P=22dBm (Single Carrier Level) SYMBOL P1dB CONDITION MIN. TYP. MAX. UNIT 32.5 33.5 7.5 0.85 24 -45 0.85    1.1   1.1 80 dBm dB A % dBc A °C f =10.7-11.
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