TIM1011-2L
TIM1011-2L is MICROWAVE POWER GaAs FET manufactured by Toshiba.
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TOSHIBA
MICROWAVE SEMICONDUCTOR TECHNICAL DATA
Features
MICROWAVE POWER Ga As FET
HIGH POWER P1d B=33.5d Bm at 10.7GHz to 11.7GHz
- HIGH GAIN G1d B=7.5d B at 10.7GHz to 11.7GHz
- -
BROAD BAND INTERNALLY MATCHED HERMETICALLY SEALED PACKAGE
- RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS Output Power at 1d B pression Point Power Gain at 1d B pression Point Drain Current Power Added Efficiency 3rd Order Intermodulation Distortion Drain Current Channel Temperature Rise IDS2 ∆Tch IDS1 G1d B VDS= 9V 6.5 Two Tone Test P=22d Bm
(Single Carrier Level)
SYMBOL P1d B
CONDITION
MIN. TYP. MAX. UNIT 32.5 33.5 7.5 0.85 24 -45 0.85 1.1 1.1 80 d Bm d B A % d Bc A °C f =10.7-11.7GHz ηadd
IM3
-42
VDS X IDS X Rth(c-c)
ELECTRICAL CHARACTERISTICS ( Ta= 25°C )
CHARACTERISTICS Transconductance Pinch-off Voltage Saturated Drain Current Gate-Source Breakdown Voltage Thermal Resistance SYMBOL gm
VGSoff IDSS VGSO Rth(c-c)
CONDITION VDS= 3V IDS=1.0A VDS= 3V IDS= 30m A VDS= 3V VGS= 0V IGS= -30µA Channel to Case
MIN. TYP. MAX. UNIT 600 m S -2.0 -5 -3.5 2.0 5.0 -5.0 2.6 6.0 V A V °C/W
- The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use, No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product.
TOSHIBA CORPORATION Apr....
