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TJ120F06J3 www.DataSheet4U.com
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅢ)
TJ120F06J3
• • • • Low drain-source ON resistance: RDS (ON) = 5.5 mΩ (typ.) High forward transfer admittance: |Yfs| = 110 S (typ.) Low leakage current: IDSS = −10 μA (max) (VDS = −60 V) Enhancement-model: Vth = −1.5 to −3.0 V (VDS = −10 V, ID = −1 mA)
0.76 ± 0.1 1.4 ± 0.1 2.54 ± 0.25 1.1 10.0 ± 0.3 9.5 ± 0.2 1.0 ± 0.3
Chopper Regulator, DC-DC Converter Applications Motor Drive Applications
Unit: mm
0.4 ± 0.1 10.0 ± 0.3
1.
TJ120F06J3 Datasheet
