TJ120F06J3 Datasheet (Toshiba Semiconductor)

TJ120F06J3 Description

TJ120F06J3 www.DataSheet4U.com TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅢ) TJ120F06J3 * * * * Low drain-source ON resistance: RDS (ON) = 5.5 mΩ (typ.) High forward transfer admittance: |Yfs| = 110 S (typ.) Low leakage current: IDSS = *10 μA (max) (VDS = *60 V) Enhancement-model: Vth = *1.5 to *3.0 V (VDS = *10 V, ID = *1 mA) 0.76 ± 0.1 1.4 ± 0.1 2.54 ± 0.25 1.1 10.0 ± 0.3 9.5 ± 0.2 1.0 ± 0.3

TJ120F06J3 Features

* S ⎟ ⋅ L ⋅ I2 ⋅ ⎜ ⎜B ⎟

* 2 V VDSS DD ⎝ ⎠ 6 2009-04-17 TJ120F06J3 www.DataSheet4U.com RESTRICTIONS ON PRODUCT USE

* Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related h