TJ10S04M3L
TJ10S04M3L is MOSFETs manufactured by Toshiba.
MOSFETs Silicon P-Channel MOS (U-MOS)
1. Applications
- -
- - Automotive Motor Drivers DC-DC Converters Switching Voltage Regulators
2. Features
(1) (2) (3) (4) AEC-Q101 qualified Low drain-source on-resistance: RDS(ON) = 33.8 mΩ (typ.) (VGS = -10 V) Low leakage current: IDSS = -10 µA (max) (VDS = -40 V) Enhancement mode: Vth = -2.0 to -3.0 V (VDS = -10 V, ID = -1 mA)
3. Packaging and Internal Circuit
1: Gate 2: Drain (heatsink) 3: Source
DPAK+
Start of mercial production
2011-03 2014-08-04 Rev.4.0
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