TJ120F06J3 Description
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅢ) TJ120F06J3 Low drain-source ON resistance: RDS (ON) = 5.5 mΩ (typ.) High forward transfer admittance: |Yfs| = 110 S (typ.) Low leakage current:.
TJ120F06J3 Datasheet
| Part number | TJ120F06J3 |
|---|---|
| Download | TJ120F06J3 Datasheet (PDF) |
| File Size | 244.17 KB |
| Manufacturer | Toshiba |
| Description | P-Channel MOSFET |
|
|