TJ120F06J3 Overview
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅢ) TJ120F06J3 Low drain-source ON resistance: RDS (ON) = 5.5 mΩ (typ.) High forward transfer admittance: |Yfs| = 110 S (typ.) Low leakage current:.
Datasheet Details
| Part number | TJ120F06J3 |
|---|---|
| Datasheet | TJ120F06J3_ToshibaSemiconductor.pdf |
| File Size | 244.17 KB |
| Manufacturer | Toshiba |
| Description | P-Channel MOSFET |
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