TJ120F06J3
TJ120F06J3 is P-Channel MOSFET manufactured by Toshiba.
TJ120F06J3 ..
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅢ)
- -
- - Low drain-source ON resistance: RDS (ON) = 5.5 mΩ (typ.) High forward transfer admittance: |Yfs| = 110 S (typ.) Low leakage current: IDSS =
- 10 μA (max) (VDS =
- 60 V) Enhancement-model: Vth =
- 1.5 to
- 3.0 V (VDS =
- 10 V, ID =
- 1 mA)
0.76 ± 0.1 1.4 ± 0.1 2.54 ± 0.25 1.1 10.0 ± 0.3 9.5 ± 0.2 1.0 ± 0.3
Chopper Regulator, DC-DC Converter Applications Motor Drive Applications
Unit: mm
0.4 ± 0.1 10.0 ±...
