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TJ100F06M3L - MOSFETs

Key Features

  • (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 5.6 mΩ (typ. ) (VGS = -10 V) Low leakage current: IDSS = -10 µA (max) (VDS = -60 V) Enhancement mode: Vth = -2.0 to -3.0 V (VDS = -10 V, ID = -1 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (Heatsink) 3: Source TO-220SM(W) 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanc.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TJ100F06M3L MOSFETs Silicon P-Channel MOS (U-MOS) TJ100F06M3L 1. Applications • • • • Automotive Relay Drivers DC-DC Converters Motor Drivers 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 5.6 mΩ (typ.) (VGS = -10 V) Low leakage current: IDSS = -10 µA (max) (VDS = -60 V) Enhancement mode: Vth = -2.0 to -3.0 V (VDS = -10 V, ID = -1 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (Heatsink) 3: Source TO-220SM(W) 4.