TK10A80E mosfet equivalent, silicon n-channel mosfet.
(1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.7 Ω (typ.) Low leakage current : IDSS = 10 µA (max) (VDS = 640 V) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V.
* Switching Voltage Regulators
2. Features
(1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.7 Ω (typ.) Low l.
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