Datasheet4U Logo Datasheet4U.com

TK150F04K3L - MOSFETs

Features

  • (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 1.7 mΩ (typ. ) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) Enhancement mode: Vth = 2.0 to 3.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (Heatsink) 3: Source TO-220SM(W) 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche ener.

📥 Download Datasheet

Datasheet preview – TK150F04K3L

Datasheet Details

Part number TK150F04K3L
Manufacturer Toshiba Semiconductor
File Size 273.78 KB
Description MOSFETs
Datasheet download datasheet TK150F04K3L Datasheet
Additional preview pages of the TK150F04K3L datasheet.

📁 Similar Datasheet

  • TK15121 - Grand Earthing System Audio Signal Mute IC (TOKO)
  • TK15125 - Dual Supply Grand Earthing System Audio Signal Mute (TOKO)
  • TK15210 - Audio Analog Switch (TOKO)
  • TK15211 - Audio Analog Switch (TOKO)
  • TK15220 - Audio Analog Switch (TOKO)
  • TK15321 - Audio Analog Switch (TOKO)
  • TK15322 - Audio Analog Switch (TOKO)
  • TK15323 - Audio Analog Switch (TOKO)
  • TK15324 - Audio Analog Switch (TOKO)
  • TK15325 - Audio Analog Switch (TOKO)
Other Datasheets by Toshiba Semiconductor

Full PDF Text Transcription

Click to expand full text
TK150F04K3L MOSFETs Silicon N-channel MOS (U-MOS) TK150F04K3L 1. Applications • • • Switching Voltage Regulators DC-DC Converters Motor Drivers 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 1.7 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) Enhancement mode: Vth = 2.0 to 3.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (Heatsink) 3: Source TO-220SM(W) 4.
Published: |