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TK17J65U MOSFETs

TK17J65U Description

TK17J65U MOSFETs Silicon N-Channel MOS (DTMOS) TK17J65U 1.Applications * Switching Voltage Regulators 2..

TK17J65U Features

* (1) (2) (3) (4) Low drain-source on-resistance: RDS(ON) = 0.20 Ω (typ. ) High forward transfer admittance: |Yfs| = 12.0 S (typ. ) Low leakage current: IDSS = 100 µA (max) (VDS = 650 V) Enhancement mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit 1: Gate (G) 2: Drain

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MOSFETs Toshiba Semiconductor
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