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TK20A60W - Silicon N-Channel MOSFET

Features

  • (1) Low drain-source on-resistance: RDS(ON) = 0.13 Ω (typ. ) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK20A60W TO-220SIS 1: Gate 2: Drain 3: Source ©2016 Toshiba Corporation 1 Start of commercial production 2013-04 2016-09-08 Rev.7.0 TK20A60W 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit.

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MOSFETs Silicon N-Channel MOS (DTMOS) TK20A60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.13 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK20A60W TO-220SIS 1: Gate 2: Drain 3: Source ©2016 Toshiba Corporation 1 Start of commercial production 2013-04 2016-09-08 Rev.7.0 TK20A60W 4.
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