TK40P04M1 - Silicon N-Channel MOSFET

Toshiba Semiconductor

Datasheet Details

Part number	TK40P04M1
Manufacturer	Toshiba Semiconductor
File Size	271.40 KB
Description	Silicon N-Channel MOSFET
Datasheet	TK40P04M1-ToshibaSemiconductor.pdf

(1) High-speed switching (2) Low gate charge: QSW = 7.4 nC (typ. ) (3) Low drain-source on-resistance: RDS(ON) = 8.5 mΩ (typ. ) (VGS = 10 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) (5) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.2 mA) 3. Packaging and Internal Circuit TK40P04M1 DPAK 1: Gate 2: Drain (heatsink) 3: Source ©2016 Toshiba Corporation 1 Start of commercial production 2008-12 2016-02-23 Rev.4.0 TK40P04M1 4. Absolute Maximum Ratings (Note) (Ta = 25 u.

📁 TK40P04M1 Similar Datasheet

Other Datasheets by Toshiba Semiconductor

Published: Sep 4, 2014 |