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TK40A10K3 - Field Effect Transistor

Key Features

  • quipment used for aut.

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Datasheet Details

Part number TK40A10K3
Manufacturer Toshiba
File Size 195.78 KB
Description Field Effect Transistor
Datasheet download datasheet TK40A10K3 Datasheet

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TK40A10K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSⅣ) TK40A10K3 Switching Regulator Application • • • • Low drain-source ON resistance: RDS (ON) = 11.5 mΩ (typ.) High forward transfer admittance: |Yfs| = 80 S Low leakage current: IDSS = 10 μA (max) (VDS = 100 V) Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 100 ±20 40 160 40 137 40 3.