TK40D10J1 Datasheet | Toshiba

.. TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOSⅢ) Switching Regulator Applications 10.0±0.3 Unit: mm 9.5±0.2 A 0.6±0.1 Ф3.65±0.2 - - - - - Small gate charge: Qg = 76nC (typ.) Low drain-source ON-resistance: RDS (ON) = 11.5 mΩ (typ.) High forward transfer admittance: |Yfs| = 90 S Low leakage current: IDSS = 10 μA (max) (VDS = 100 V) Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA) 1.1±0.15 3.2 2.8 9.0 15.0±0.3 0.75±0.25 2.8Max. 0.62±0.15 12.8±0.5 +0.25 0.57...