Datasheet4U Logo Datasheet4U.com

TK49N65W5 - Silicon N-Channel MOSFET

Features

  • (1) Fast reverse recovery time: trr = 145 ns (typ. ) (2) Low drain-source on-resistance: RDS(ON) = 0.051 Ω (typ. ) by using Super Junction Structure : DTMOS (3) Easy to control Gate switching (4) Enhancement mode: Vth = 3 to 4.5 V (VDS = 10 V, ID = 2.5 mA) 3. Packaging and Internal Circuit TK49N65W5 TO-247 1: Gate 2: Drain (Heatsink) 3: Source Start of commercial production 2013-09 1 2014-08-27 Rev.3.0 TK49N65W5 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Cha.

📥 Download Datasheet

Datasheet preview – TK49N65W5
Other Datasheets by Toshiba Semiconductor

Full PDF Text Transcription

Click to expand full text
MOSFETs Silicon N-Channel MOS (DTMOS) TK49N65W5 1. Applications • Switching Voltage Regulators 2. Features (1) Fast reverse recovery time: trr = 145 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.051 Ω (typ.) by using Super Junction Structure : DTMOS (3) Easy to control Gate switching (4) Enhancement mode: Vth = 3 to 4.5 V (VDS = 10 V, ID = 2.5 mA) 3. Packaging and Internal Circuit TK49N65W5 TO-247 1: Gate 2: Drain (Heatsink) 3: Source Start of commercial production 2013-09 1 2014-08-27 Rev.3.0 TK49N65W5 4.
Published: |