TK4P60DB Datasheet Text
MOSFETs Silicon N-Channel MOS (π-MOS)
TK4P60DB
1. Applications
- Switching Voltage Regulators
2. Features
(1) Low drain-source on-resistance : RDS(ON) = 1.6 Ω (typ.) (2) High forward transfer admittance : |Yfs| = 2.2 S (typ.) (3) Low leakage current : IDSS = 10 µA (max) (VDS = 600 V) (4) Enhancement mode : Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA)
3. Packaging and Internal Circuit
TK4P60DB
DPAK
1: Gate 2: Drain (Heatsink) 3: Source
Start of mercial production
2009-12
1
2015-03-05
Rev.1.0
TK4P60DB
4....
