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Toshiba Electronic Components Datasheet

TK4P60DB Datasheet

MOSFETs

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TK4P60DB
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOS)
TK4P60DB
Switching Regulator Applications
Unit: mm
Low drain-source ON-resistance: RDS (ON) = 1.6 Ω (typ.)
High forward transfer admittance: Yfs= 2.2 S (typ.)
Low leakage current: IDSS = 10 μA (max) (VDS = 600 V)
Enhancement-mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA)
6.6 ± 0.2
5.34 ± 0.13
0.58MAX
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Gate-source voltage
Drain current
DC (Note 1)
Pulse (t = 1 ms)
(Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
VDSS
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
Rating
600
±30
3.7
14.8
80
147
3.7
8
150
55 to 150
Unit
V
V
A
W
mJ
A
mJ
°C
°C
1.14MAX
0.76 ± 0.12
2.29
123
1. GATE
2. DRAIN
HEAT SINK
3. SOURCE
JEDEC
JEITA
TOSHIBA
2-7K1A
Weight : 0.36 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and
Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Symbol
Rth (ch-c)
Rth (ch-a)
Max Unit
1.56 °C/W
125 °C/W
2
Note 1: Please use devices on conditions that the channel temperature is below 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 18.7 mH, RG = 25 Ω, IAR = 3.7 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
1
3
1 2010-02-25


Toshiba Electronic Components Datasheet

TK4P60DB Datasheet

MOSFETs

No Preview Available !

Electrical Characteristics (Ta = 25°C)
TK4P60DB
Characteristics
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON-resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Turn-on time
Switching time
Fall time
Turn-off time
Total gate charge
Gate-source charge
Gate-drain charge
Symbol
Test Condition
Min Typ. Max Unit
IGSS
IDSS
V (BR) DSS
Vth
RDS (ON)
Yfs
Ciss
Crss
Coss
VGS = ±30 V, VDS = 0 V
VDS = 600 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
VDS = 10 V, ID = 1 mA
VGS = 10 V, ID = 1.9 A
VDS = 10 V, ID = 1.9 A
VDS = 25 V, VGS = 0 V, f = 1 MHz
⎯⎯
⎯⎯
600
2.4
1.6
0.6 2.2
540
3
60
±1
10
4.4
2.0
μA
μA
V
V
Ω
S
pF
tr
10 V
VGS
ID = 1.9.A VOUT
18
0V
ton
RL =
40
50 Ω
105 Ω
ns
tf 8
Duty 1%, tw = 10 μs VDD 200 V
toff 55
Qg
Qgs VDD 400 V, VGS = 10 V, ID = 3.7 A
Qgd
11
6 nC
5
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
IDR = 3.7 A, VGS = 0 V
IDR = 3.7 A, VGS = 0 V,
dIDR/dt = 100 A/μs
Min Typ. Max Unit
⎯ ⎯ 3.7 A
⎯ ⎯ 14.8 A
⎯ ⎯ −1.7 V
1000
ns
5.5 ⎯ μC
Marking (Note 4)
TK4P60DB
Part No. (or abbreviation code)
Lot No.
Note 4: * Weekly code: (Four digits)
Week of manufacture
(01 for first week of year, continuing up to 52 or 53)
Year of manufacture
(The last 2digits of the calendar year)
2
2010-02-25


Part Number TK4P60DB
Description MOSFETs
Maker Toshiba Semiconductor
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TK4P60DB Datasheet PDF






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