TK4P60DB
Features
(1) Low drain-source on-resistance : RDS(ON) = 1.6 Ω (typ.) (2) High forward transfer admittance : |Yfs| = 2.2 S (typ.) (3) Low leakage current : IDSS = 10 µA (max) (VDS = 600 V) (4) Enhancement mode : Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 m A)
3. Packaging and Internal Circuit
DPAK
1: Gate 2: Drain (Heatsink) 3: Source
Start of mercial production
2009-12
2015-03-05
Rev.1.0
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
Gate-source voltage
VGSS
±30
Drain current (DC)
(Note 1)
Drain current (pulsed)
(Note 1)
Power dissipation
(Tc = 25 )
Single-pulse avalanche energy
(Note 2)
147 m J
Avalanche current
(Note 3)
Repetitive avalanche energy
(Note...
