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TK60A08J1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOSⅢ)
TK60A08J1
Switching Regulator Application
• • • • • • High-Speed switching Small gate charge: Qg = 86 nC (typ.) Low drain-source ON resistance: RDS (ON) = 6.2 mΩ (typ.) High forward transfer admittance: |Yfs| = 120 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 75 V) Enhancement-mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA) Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 75 75 ±20 60 240 45 498 60 2.
TK60A08J1 Datasheet
