* (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 2.4 mΩ (typ.) (VGS = 10 V) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) (4) Enhancement mode: Vth = 2.0 to 3.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK80S04K3L DPAK+ 1: Gate 2: Drain (heatsink)
TK80S04K3L Datasheet (305.18 KB)
TK80S04K3L
Toshiba ↗ Semiconductor
305.18 KB
Silicon n-channel mosfet.
MOSFETs Silicon N-channel MOS (U-MOS) TK80S04K3L 1. Applications Automotive Motor Drivers DC-DC Converters Sw.
📁 Related Datasheet
TK80S06K3L Silicon N-Channel MOSFET (Toshiba)
TK8011 1 key touch detector (Tenx)
TK8012 2 key touch detector (Tenx)
TK8021 1 key touch detector (Tenx)
TK8022 2 key touch detector (Tenx)
TK8023 3 key touch detector (Tenx)
TK80A04K3L MOSFETs (Toshiba Semiconductor)
TK80A04K3L N-Channel MOSFET (INCHANGE)
TK80A08K3 Field Effect Transistor (Toshiba Semiconductor)
TK80D08K3 Switching Regulator Applications (Toshiba Semiconductor)
