* (1) (2) (3) (4) AEC-Q101 qualified Low drain-source on-resistance: RDS(ON) = 43 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) Enhancement mode: Vth = 2.0 to 3.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (heatsink) 3: Source DPAK+ S
TK8S06K3L Datasheet (239.78 KB)
TK8S06K3L
Toshiba ↗ Semiconductor
239.78 KB
Silicon n-channel mosfet.
TK8S06K3L MOSFETs Silicon N-channel MOS (U-MOS) TK8S06K3L 1. Applications Automotive Motor Drivers DC-DC Con.
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