Datasheet4U Logo Datasheet4U.com

TPC8039-H - Field Effect Transistor

Features

  • e inclusion or use of controlled substances. Toshiba assumes no liability for damage or.

📥 Download Datasheet

Datasheet Details

Part number TPC8039-H
Manufacturer Toshiba
File Size 253.23 KB
Description Field Effect Transistor
Datasheet download datasheet TPC8039-H Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
TPC8037-H N-Channel MOSFET Toshiba
TPC8007-H N-Channel MOSFET Toshiba
TPC8020-H N-Channel MOSFET VBsemi
TPC8024-H Silicon N-Channel MOS Type Field Effect Transistor Toshiba
TPC8026 N-Channel MOSFET Toshiba

Other Datasheets by Toshiba

Part Number Description
TPC8030 Field Effect Transistor
TPC8032-H Silicon N-Channel MOS Type Field Effect Transistor
TPC8033-H Field Effect Transistor
TPC8035-H Field Effect Transistor
TPC8036-H Field Effect Transistor

Full PDF Text Transcription

Click to expand full text
TPC8039-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅥ-H) TPC8039-H High Efficiency DC-DC Converter Applications Notebook PC Applications Portable Equipment Applications • • • • • • • Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 8.6 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 4.1 mΩ (typ.) High forward transfer admittance: |Yfs| = 60 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.
Published: |