Datasheet Summary
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅤ-H)
High Efficiency DC/DC Converter Applications Notebook PC Applications Portable Equipment Applications
Unit: mm
- Small footprint due to small and thin package
- High-speed switching
- Small gate charge: QSW = 9.6 nC (typ.)
- Low drain-source ON-resistance: RDS (ON) = 4.0 mΩ (typ.)
- High forward transfer admittance: |Yfs| = 62 S (typ.)
- Low leakage current: IDSS = 10 μA (max) (VDS = 30 V)
- Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 1...