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TPC8033-H - Field Effect Transistor

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  • led substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 7 2007-12-25.

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Datasheet Details

Part number TPC8033-H
Manufacturer Toshiba
File Size 223.29 KB
Description Field Effect Transistor
Datasheet download datasheet TPC8033-H Datasheet

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TPC8033-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅤ-H) TPC8033-H High Efficiency DC/DC Converter Applications Notebook PC Applications Portable Equipment Applications Unit: mm • Small footprint due to small and thin package • High-speed switching • Small gate charge: QSW = 9.6 nC (typ.) • Low drain-source ON-resistance: RDS (ON) = 4.0 mΩ (typ.) • High forward transfer admittance: |Yfs| = 62 S (typ.) • Low leakage current: IDSS = 10 μA (max) (VDS = 30 V) • Enhancement mode: Vth = 1.5 to 2.