Datasheet Summary
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅤ-H)
High-Efficiency DC-DC Converter Applications Notebook PC Applications Portable Equipment Applications
Unit: mm
- Small footprint due to a small and thin package
- High-speed switching
- Small gate charge: QSW = 5.0 nC (typ.)
- Low drain-source ON-resistance: RDS (ON) = 7.6 mΩ (typ.)
- High forward transfer admittance: |Yfs| = 36 S (typ.)
- Low leakage current: IDSS = 10 μA (max) (VDS = 30 V)
- Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 1...