TPC8035-H Datasheet | Toshiba

TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅥ-H) High Efficiency DC-DC Converter Applications Notebook PC Applications Portable Equipment Applications - - - - - - - Small footprint due to small and thin package High-speed switching Small gate charge: QSW = 17 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 2.3 mΩ (typ.) High forward transfer admittance: |Yfs| = 70 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 1 mA) Unit:...