TPC8A02-H - N-Channel MOSFET

Toshiba

Datasheet Details

Part number	TPC8A02-H
Manufacturer	Toshiba
File Size	507.61 KB
Description	N-Channel MOSFET
Datasheet	TPC8A02-H Datasheet

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TPC8A02-H www.DataSheet4U.com ＴOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type (Ultra-High-Speed U-MOS Ⅲ) TPC8A02-H High-Efficiency DC/DC Converter Applications Notebook PC Applications Portable-Equipment Applications • • • • • • • Built-in schottky barrier diode Low forward voltage: VDSF = 0.6V(Max.) High-speed switching. Small gate charge.: QSW ＝ 11 nC(Typ.) Low drain-source ON-resistance: RDS (ON) = 4.3 mΩ (typ.) High forward transfer admittance: |Yfs| = 40 S (typ.) Low leakage current: IDSS = 100 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.1 to 2.