Datasheet Summary
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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOSIII)
High-Speed and High-Efficiency DC-DC Converters Notebook PC Applications Portable Equipment Applications
6.0±0.3 0.5±0.1 8 1.27 5.0±0.2
Unit: mm
0.4±0.1 5 0.05 M A
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- Small footprint due to small and thin package High-speed switching Small gate charge: Qsw = 6.6 nC (typ.) Low drain-source ON resistance: RDS (ON) = 16 mΩ (typ.) High forward transfer admittance: |Yfs| = 40 S (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA)
0.15±0.05
1 5.0±0.2 0.95±0.05
0.595 A...