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TPCA8011-H
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-speed U-MOSIII)
TPCA8011-H
High Efficiency DC／DC Converter Applications Notebook PC Applications Portable-Equipment Applications
Unit: mm
0.5±0.1 1.27 0.4±0.1
8
5
0.05 M A
6.0±0.3 5.0±0.2
• Small footprint due to a small and thin package • High speed switching • Small gate charge: QSW =16 nC (typ.) • Low drain-source ON-resistance: RDS (ON) = 2.7 mΩ (typ.) • High forward transfer admittance: |Yfs| =120 S (typ.) • Low leakage current: IDSS = 10 μA (max) (VDS = 20 V) • Enhancement mode: Vth = 0.6 to 1.3 V (VDS = 10 V, ID = 200 μA)
0.15±0.05
0.95±0.05
1
4
5.0±0.2
0.595
A 0.166±0.05
S
0.05 S
1
4 1.1±0.2
0.6±0.1 3.5±0.2
4.25±0.
TPCA8011-H Datasheet
