The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
www.DataSheet4U.com
TPCA8016-H
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOSIII)
TPCA8016-H
High-Speed and High-Efficiency DC-DC Converters Notebook PC Applications Portable Equipment Applications
6.0±0.3 0.5±0.1 8 1.27 5.0±0.2
Unit: mm
0.4±0.1 5 0.05 M A
• • • • • • •
Small footprint due to small and thin package High-speed switching Small gate charge: Qsw = 6.6 nC (typ.) Low drain-source ON resistance: RDS (ON) = 16 mΩ (typ.) High forward transfer admittance: |Yfs| = 40 S (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA)
0.15±0.05
1 5.0±0.2 0.95±0.05
4
0.595 A 0.166±0.05
S 1
0.05 S 4 1.1±0.2
4.25±0.
TPCA8016-H Datasheet
