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TPCA8015-H www.DataSheet4U.com
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOSIII)
TPCA8015-H
High-Efficiency DC／DC Converter Applications
0.5±0.1 8 1.27 0.4±0.1 5
Unit: mm
0.05 M A
6.0±0.3
• • • • • • •
Small footprint due to small and thin package High-speed switching Small gate charge: Qsw = 13 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 4.4 mΩ (typ.) High forward transfer admittance: |Yfs| = 60 S (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA)
5.0±0.2
0.15±0.05
1 5.0±0.2 0.95±0.05
4
0.595 A 0.166±0.05
S 1
0.05 S 4 1.1±0.2
0.6±0.1
4.25±0.
TPCA8015-H Datasheet
