Datasheet4U Logo Datasheet4U.com

TPCC8003-H - Field Effect Transistor

Features

  • iances) or for specific.

📥 Download Datasheet

Datasheet preview – TPCC8003-H

📁 Similar Datasheet

Other Datasheets by Toshiba Semiconductor
  • TPCC8001-H - Field Effect Transistor
  • TPCC8002-H - Silicon N-Channel MOSFET
  • TPCC8005-H - Silicon N-Channel MOSFET
  • TPCC8006-H - Field Effect Transistor
  • TPCC8007 - MOSFETs
  • TPCC8008 - Field Effect Transistor Silicon N-Channel MOS Type
  • TPCC8009 - Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications
  • TPCC8102 - Field Effect Transistor Silicon P-Channel MOS Type

Full PDF Text Transcription

Click to expand full text
TPCC8003-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅥ-H) TPCC8003-H High-Efficiency DC-DC Converter Applications Notebook PC Applications Portable Equipment Applications • • • • • • • Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 4.2 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 14.3 mΩ (typ.) ( VGS = 4.5 V) High forward transfer admittance: |Yfs| = 33 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.
Published: |