Datasheet4U Logo Datasheet4U.com

TPCC8006-H - Field Effect Transistor

Key Features

  • xpressly stated in this document. Product is neither intended.

📥 Download Datasheet

Datasheet Details

Part number TPCC8006-H
Manufacturer Toshiba
File Size 217.07 KB
Description Field Effect Transistor
Datasheet download datasheet TPCC8006-H Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
TPCC8061-H Field Effect Transistor Toshiba
TPCC8062-H MOSFETs Toshiba
TPCC8064-H MOSFETs Toshiba
TPCC8065-H Field Effect Transistor Toshiba
TPCC8066-H MOSFETs Toshiba

Other Datasheets by Toshiba

Part Number Description
TPCC8001-H Field Effect Transistor
TPCC8002-H Silicon N-Channel MOSFET
TPCC8003-H Field Effect Transistor
TPCC8005-H Silicon N-Channel MOSFET
TPCC8007 MOSFETs

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
TPCC8006-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅥ-H) TPCC8006-H High-Efficiency DC-DC Converter Applications Notebook PC Applications Portable Equipment Applications • • • • • • • Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 7.4 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 6.5 mΩ (typ.) ( VGS = 4.5 V) High forward transfer admittance: |Yfs| = 67 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.