TPCC8003-H - Field Effect Transistor

Toshiba

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TPCC8003-H field effect transistor by Toshiba - Datasheet Preview

Datasheet Details

Part number	TPCC8003-H
Manufacturer	Toshiba
File Size	217.68 KB
Description	Field Effect Transistor
Datasheet	TPCC8003-H Datasheet

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TPCC8003-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅥ-H) TPCC8003-H High-Efficiency DC-DC Converter Applications Notebook PC Applications Portable Equipment Applications • • • • • • • Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 4.2 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 14.3 mΩ (typ.) ( VGS = 4.5 V) High forward transfer admittance: |Yfs| = 33 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.