TPCC8001-H Datasheet | Toshiba

TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS -H) High-Efficiency DC-DC Converter Applications Notebook PC Applications Portable Equipment Applications - - - - - - - Unit: mm Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 7.1 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 7.6 mΩ (typ.) ( VGS = 4.5 V) High forward transfer admittance: |Yfs| = 65 S (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 1...