TPCC8104 - Silicon P-Channel MOSFET

Toshiba Semiconductor

Datasheet Details

Part number	TPCC8104
Manufacturer	Toshiba ↗ Semiconductor
File Size	232.15 KB
Description	Silicon P-Channel MOSFET
Datasheet	TPCC8104-ToshibaSemiconductor.pdf

(1) (2) (3) (4) Small footprint due to a small and thin package Low drain-source on-resistance: RDS(ON) = 6.8 mΩ (typ. ) (VGS = -10 V) Low leakage current: IDSS = -10 µA (max) (VDS = -30 V) Enhancement mode: Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -0.5 mA) 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain TSON Advance 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Dr.

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Published: Aug 30, 2014 |