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TPCC8105
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOSⅥ)
TPCC8105
Lithium Ion Battery Applications Power Management Switch Applications
Unit: mm
• Small footprint due to a small and thin package • Low drain-source ON-resistance:
RDS (ON) = 6.0 mΩ (typ.)( VGS = −10 V) • Low leakage current: IDSS = −10 µA (max) (VDS = −30 V) • Enhancement mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −0.
TPCC8105 Datasheet
