TPCC8106 - Silicon P-Channel MOSFET

Toshiba Semiconductor

Datasheet Details

Part number	TPCC8106
Manufacturer	Toshiba ↗ Semiconductor
File Size	289.35 KB
Description	Silicon P-Channel MOSFET
Datasheet	TPCC8106-ToshibaSemiconductor.pdf

(1) AEC-Q101 qualified (2) Small, thin package (3) Low drain-source on-resistance: RDS(ON) = 9.5 mΩ (typ. ) (VGS = -10 V) (4) Low leakage current: IDSS = -10 µA (max) (VDS = -40 V) (5) Enhancement mode: Vth = -2.0 to -3.0 V (VDS = -10 V, ID = -1.0 mA) 3. Packaging and Internal Circuit TPCC8106 TSON Advance 1,2,3: Source 4: Gate 5, 6, 7, 8: Drain ©2017-2019 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2012-07 2019-03-14 Rev.5.0 TPCC8106 4. Absolute Maxi.

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Published: Aug 30, 2014 |